Electro-optical device and electronic apparatus

ABSTRACT

A liquid crystal device includes a scanning line driving circuit, a data line driving circuit, a first VDD power supply wiring line that supplies power to the data line driving circuit, a second VDD power supply wiring line that supplies power to the scanning line driving circuit, and a common wiring line that electrically connects the first VDD power supply wiring line and the second VDD power supply wiring line to each other in an integrated manner. The common wiring line includes electrical conductors, a wiring line, and contact holes.

BACKGROUND

1. Technical Field

The present invention relates to an electro-optical device and anelectronic apparatus.

2. Related Art

An active drive type liquid crystal device that includes transistors,which serve as elements for controlling switching of pixel electrodes,corresponding to pixels is a known example of an electro-optical device.In the liquid crystal device, for example, due to static electricitygenerated in a manufacturing process, excessive voltage may be appliedto transistors and wiring lines provided in peripheral circuitry(specifically, circuitry such as a data line driving circuit and ascanning line driving circuit which are connected to a power source),and thereby electrostatic damage is caused.

JP-A-2007-65157, for example, discloses a technique in which a powersupply wiring line for a data line driving circuit and a power supplywiring line for a scanning line driving circuit are connected to eachother in an integrated manner using a common wiring line, therebypreventing transistors, wiring lines, etc. from being damaged by staticelectricity generated in a manufacturing process or the like.

In the technique disclosed in JP-A-2007-65157, however, because thecommon wiring line is disposed on a layer that is above a layer on whichthe transistors, the wiring lines, and so forth are provided, and isconnected to them, when patterning of the wiring lines and so forth isperformed, the power supply wiring lines have not yet been connected toeach other in an integrated manner. Hence, if static electricity isgenerated when the patterning is performed, because there are no pathsto let the static electricity escape, electric charges are concentratedin the transistors, the wiring lines, etc. and thereby damage them.

SUMMARY

The invention may be implemented as the following aspects or applicationexamples.

Application Example 1

An electro-optical device according to an application example includes adata line driving circuit, a scanning line driving circuit, a firstpower supply wiring line that supplies power to the data line drivingcircuit, a second power supply wiring line that supplies power to thescanning line driving circuit, a wiring line that electrically connectsthe first power supply wiring line and the second power supply wiringline to each other, a first electrical conductor that electricallyconnects the first power supply wiring line and the wiring line to eachother, and a second electrical conductor that electrically connects thesecond power supply wiring line and the wiring line to each other.

According to this structure, the first power supply wiring line and thesecond power supply wiring line are electrically connected to each otherin an integrated manner via the first electrical conductor, the secondelectrical conductor, and the wiring line. (Alternatively, portionsserving as the first power supply wiring line and the second powersupply wiring line are electrically connected to each other in anintegrated manner.) Thus, even if static electricity is generated whenpatterning of transistors, wiring lines, and so forth which areconnected to the data line driving circuit and the scanning line drivingcircuit is performed, because the power supply wiring lines areredundantly routed through the electrical conductors and the wiringline, the static electricity may be prevented from being concentrated ina portion. Hence, the amount of static electricity is reduced, so thatelectrostatic damage of the transistors and the wiring lines, which areconnected to the power supply wiring lines to which power is supplied,may be suppressed. In addition, the electrical conductors may be used asinrush resistors and thereby may consume electric charges.

Application Example 2

The electro-optical device according to the application example mayfurther include a first insulating film that is provided between a layeron which the first power supply wiring line and the second power supplywiring line are provided and a layer on which the first electricalconductor and the second electrical conductor are provided, and a secondinsulating film that is provided between the layer on which the firstelectrical conductor and the second electrical conductor are providedand a layer on which the wiring line is provided. It is preferable thatthe first electrical conductor and the second electrical conductor beprovided between the layer on which the first power supply wiring lineand the second power supply wiring line are provided and the layer onwhich the wiring line is provided.

According to this structure, because the power supply wiring lines andthe wiring line are spaced apart from each other by and also areredundantly routed through the first electrical conductor and the secondelectrical conductor, which are provided between the first insulatingfilm and the second insulating film, static electricity may be preventedfrom being concentrated in a portion. Hence, the amount of staticelectricity is reduced, so that electrostatic damage of the transistorsand the wiring lines, which are connected to the power supply wiringlines to which power is supplied, may be suppressed.

Application Example 3

In the electro-optical device according to the application example, itis preferable that the first power supply wiring line and the firstelectrical conductor be connected to each other via a first contact holewhich is provided in the first insulating film, the second power supplywiring line and the second electrical conductor be connected to eachother via the first contact hole, and the first electrical conductor andthe second electrical conductor be connected to the wiring line via asecond contact hole which is provided in the second insulating film.

According to this structure, because the power supply wiring lines, theelectrical conductors, and the wiring line are spaced apart from oneanother by and also are redundantly routed through the first contacthole and the second contact hole, static electricity may be preventedfrom being concentrated in a portion. Hence, the amount of staticelectricity is reduced, so that electrostatic damage of the transistorsand the wiring lines, which are connected to the power supply wiringlines to which power is supplied, may be suppressed.

Application Example 4

In the electro-optical device according to the application example, itis preferable that connection resistance of the second contact hole behigher than that of the first contact hole.

According to this structure, because the connection resistance of thesecond contact hole which is close to the wiring line is higher, theamount of static electricity (electric charge) may be reduced beforestatic electricity (electric charge) flows to the wiring line. Hence,the transistors and the wiring lines, which are connected to the powersupply wiring lines, may be protected from the static electricity.

Application Example 5

In the electro-optical device according to the application example, itis preferable that the first electrical conductor and the secondelectrical conductor be provided in the same film as a gate electrode.

According to this structure, because the electrical conductors areprovided on the same layer as the gate electrode, for example, thewiring line is provided on the layer below the electrical conductors,metal wiring lines (first power supply wiring line and second powersupply wiring line) are provided on the layer above the gate electrode,and the distance between the wiring line and the metal wiring lines,which are connected to each other via the electrical conductors, may beincreased. Hence, the wiring lines may be prevented from intersecting ata close distance, and electrostatic damage of the wiring lines, thetransistors, and so forth may be suppressed.

Application Example 6

The electro-optical device according to the application example mayfurther include transistors that are provided so as to correspond to aplurality of pixel portions and a light shielding film that shields thetransistors from light. It is preferable that the wiring line beprovided in the same film as the light shielding film.

According to this structure, because the wiring line is provided on thesame layer as the light shielding film, for example, the wiring line isprovided on the layer below the electrical conductors, the metal wiringlines (first power supply wiring line and second power supply wiringline) are provided on the layer above the gate electrode, and thedistance between the wiring line and the metal wiring lines, which areconnected to each other via the electrical conductors, may be increased.Hence, the wiring lines may be prevented from intersecting at a closedistance, and electrostatic damage of the wiring lines, the transistors,and so forth may be suppressed.

Application Example 7

In the electro-optical device according to the application example, itis preferable that the first power supply wiring line and the secondpower supply wiring line be formed of the same film as a data line.

According to this structure, the first power supply wiring line and thesecond power supply wiring line are provided in the same film as thedata line. Hence, even if static electricity is generated whenpatterning of the first power supply wiring line and the second powersupply wiring line is performed, electric charges may be caused to passthrough the electrical conductors and the wiring line by previouslyconnecting the power supply wiring lines to each other in an integratedmanner by the electrical conductors and the wiring line, which aredisposed on the layers below the power supply wiring lines. As a result,the transistors and the wiring lines, which are connected to the powersupply wiring lines, may be protected from the static electricity.

Application Example 8

An electronic apparatus according to the application example includesthe foregoing electro-optical device.

According to this structure, because the electronic apparatus includesthe foregoing electro-optical device, the transistors and the wiringlines, which are connected to the power supply wiring lines provided inperipheral circuitry, may be protected from static electricity, so thatthe electronic apparatus that allows improvement in the reliability andthe yield thereof to be achieved may be provided.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with reference to the accompanyingdrawings, wherein like numbers reference like elements.

FIG. 1 is a schematic plan view illustrating the structure of a liquidcrystal device as an electro-optical device.

FIG. 2 is a schematic cross-sectional view of the liquid crystal devicetaken along line II-II of FIG. 1.

FIG. 3 is an equivalent circuit diagram illustrating the electricalstructure of the liquid crystal device.

FIG. 4 is a schematic cross-sectional view illustrating the structure ofthe liquid crystal device.

FIG. 5 is a schematic plan view illustrating the structure of part ofperipheral circuitry in the liquid crystal device.

FIG. 6 is a schematic cross-sectional view of the peripheral circuitrytaken along line VI-VI of FIG. 5.

FIG. 7 is a schematic view illustrating the structure of a projectiondisplay device (projector) as an electronic apparatus including theelectro-optical device.

DESCRIPTION OF EXEMPLARY EMBODIMENT

An embodiment embodying an aspect of the invention will be describedbelow with reference to the accompanying drawings. In the drawings usedherein, parts or portions to be described are appropriately enlarged orreduced in size so that the parts or portions are recognizable.

In the following embodiment, for example, the phrase “on a substrate”refers to a state in which a component is disposed on a substrate so asto be in contact with it, in which a component is disposed on asubstrate, with another component interposed therebetween, or in which aportion of a component is disposed on a substrate so as to be in contactwith it and another portion of the component is disposed on thesubstrate, with another component interposed therebetween.

In the embodiment, an active matrix liquid crystal device including thinfilm transistors (TFTs) as switching elements for pixels will bedescribed as an example of an electro-optical device. The liquid crystaldevice may preferably be used as, for example, a light modulator (liquidcrystal light valve) of a projection display device (liquid crystalprojector), which will be described below.

Structure of Electro-Optical Device

FIG. 1 is a schematic plan view illustrating the structure of the liquidcrystal device as the electro-optical device. FIG. 2 is a schematiccross-sectional view of the liquid crystal device taken along line II-IIof FIG. 1. FIG. 3 is an equivalent circuit diagram illustrating theelectrical structure of the liquid crystal device. FIG. 4 is a schematiccross-sectional view illustrating the structure of the liquid crystaldevice. The structure of the liquid crystal device will be describedwith reference to FIGS. 1 to 4.

As illustrated in FIGS. 1 and 2, a liquid crystal device 100 of theembodiment includes an element substrate 10 and a counter substrate 20that are disposed opposite each other, and a liquid crystal layer 15that is sandwiched between the pair of substrates. The element substrate10 is constituted by a first substrate 11 and the counter substrate 20is constituted by a second substrate 12. As the first and secondsubstrates 11 and 12, for example, transparent substrates, such as glasssubstrates, or silicon substrates are used.

The element substrate 10 is slightly larger than the counter substrate20. These substrates are bonded to each other with a sealing material 14disposed in a frame shape therebetween. The gap therebetween is filledwith liquid crystal with positive or negative dielectric anisotropy soas to form the liquid crystal layer 15. As the sealing material 14, forexample, an adhesive, such as a thermosetting or ultraviolet curableepoxy resin, is employed. A gap material is contained in the sealingmaterial 14 so as to keep a certain space between the pair ofsubstrates.

On the counter substrate 20 side, a light shielding layer 18 is providedin a frame shape inside of the sealing material 14 disposed in a frameshape. The light shielding layer 18 is composed of, for example, a lightshielding metal or metallic oxide. A display area E having a pluralityof pixels P is formed inside of the light shielding layer 18. In thedisplay area E as well, a light shielding section, which is notillustrated in FIG. 1, is provided so as to partition the plurality ofpixels P in plan view.

A data line driving circuit 22 is provided between one edge portion ofthe first substrate 11 and the sealing material 14 along the one edgeportion. An inspection circuit 25 is provided inside of the sealingmaterial 14 along another edge portion opposite the one edge portion.Scanning line driving circuits 24 are provided inside of the sealingmaterial 14 along the other two edge portions that are perpendicular tothe one edge portion and that face each other. A plurality of wiringlines (not illustrated) that connect the two scanning line drivingcircuits 24 are provided inside of the sealing material 14 along theother edge portion opposite the one edge portion.

Wiring lines that are connected to the data line driving circuit 22 andthe scanning line driving circuits 24 are connected to a plurality ofexternal connection terminals 61 that are arranged along the one edgeportion. Hereinafter, a direction along the one edge portion is definedas an X direction, and a direction along the other two edge portionsthat are perpendicular to the one edge portion and that face each otheris defined as a Y direction. The arrangement of the inspection circuit25 is not limited to this. The inspection circuit 25 may be provided ata position along the inside of the sealing material 14 between the dataline driving circuit 22 and the display area E.

As illustrated in FIG. 2, on a surface of the first substrate 11 on theliquid crystal layer 15 side, there are formed pixel electrodes 27, thinfilm transistors 30 (hereinafter referred to as “TFTs 30”) as switchingelements, signal wiring lines, and an alignment film 28 that coversthem. The pixel electrodes 27 and the TFTs 30 are provided for thepixels P and have optical transparency. In addition, a light shieldingstructure is employed that prevents light incident on semiconductorlayers in the TFTs 30 from destabilizing a switching operation.

On a surface of the second substrate 12 on the liquid crystal layer 15side, there are provided the light shielding layer 18, an interlayerinsulating layer (not illustrated) that is formed so as to cover thelight shielding layer 18, a common electrode 31 that is provided so asto cover the interlayer insulating layer, and an alignment film 32 thatcovers the common electrode 31.

As illustrated in FIG. 1, the light shielding layer 18 is provided in aframe shape at positions where it overlaps the scanning line drivingcircuits 24 and the inspection circuit 25 in plan view. This blockslight incident from the counter substrate 20 side so as to serve afunction of preventing malfunction of peripheral circuitry includingthese driving circuits due to light. In addition, this preventsunnecessary stray light from entering the display area E so as to securea high contrast display in the display area E.

The interlayer insulating layer is composed of, for example, aninorganic material, such as a silicon oxide, and has opticaltransparency. The interlayer insulating layer is provided so as to coverthe light shielding layer 18. A method of forming such an interlayerinsulating layer is a formation method using, for example, a plasmachemical vapor deposition (CVD) technique.

The common electrode 31 is composed of, for example, a transparentconductive film, such as an indium tin oxide (ITO), and covers theinterlayer insulating layer. Also, as illustrated in FIG. 1, the commonelectrode 31 is electrically connected to wiring lines on the elementsubstrate 10 side by vertical conductive portions 26 that are providedat the four corners of the counter substrate 20.

The alignment film 28, which covers the pixel electrodes 27, and thealignment film 32, which covers the common electrode 31, are selected inaccordance with the optical design of the liquid crystal device 100. Anexample of such alignment films is a film of an inorganic material, suchas a silicon oxide (SiOx). The film is formed by using a vapordeposition technique so as to provide substantially vertical alignmentwith respect to liquid crystal molecules.

As illustrated in FIG. 3, the liquid crystal device 100 has a pluralityof scanning lines 3 a and a plurality of data lines 6 a, which areinsulated from each other and intersect at right angles in at least thedisplay area E, and capacitor lines 3 b. A direction in which thescanning lines 3 a extend is defined as an X direction, and a directionin which the data lines 6 a extend is defined as a Y direction.

The pixel electrodes 27, the TFTs 30, and capacitor elements 16 areprovided in regions divided by the scanning lines 3 a, the data lines 6a, the capacitor lines 3 b, and signal lines thereof. The pixelelectrodes 27, TFTs 30, and capacitor elements 16 constitute pixelcircuits of the pixels P.

The scanning lines 3 a are electrically connected to gates of the TFTs30, and the data lines 6 a are electrically connected to data-line-sidesource/drain regions of the TFTs 30. The pixel electrodes 27 areelectrically connected to pixel-electrode-side source/drain regions ofthe TFTs 30.

The data lines 6 a are connected to the data line driving circuit 22(see FIG. 1) and supply image signals D1, D2, . . . , and Dn, which aresupplied from the data line driving circuit 22, to the pixels P. Thescanning lines 3 a are connected to the scanning line driving circuits24 (see FIG. 1) and supply scanning signals SC1, SC2, . . . , and SCm,which are supplied from the scanning line driving circuits 24, to thepixels P.

The image signals D1 to Dn from the data line driving circuit 22 may beline-sequentially supplied in this order to the data lines 6 a, or maybe supplied to each group of the data lines 6 a which are adjacent toone another. The scanning line driving circuits 24 line-sequentiallysupply the scanning signals SC1 to SCm to the scanning lines 3 a in theform of pulses at a predetermined timing.

In the liquid crystal device 100, the TFTs 30, which are switchingelements, are set to an ON state for only a certain period of time byinput of the scanning signals SC1 to SCm, so that the image signals D1to Dn supplied from the data lines 6 a are written into the pixelelectrodes 27 at a predetermined timing. The image signals D1 to Dn at apredetermined level written into the liquid crystal layer 15 via thepixel electrodes 27 are held, for a certain period of time, between thepixel electrodes 27 and the common electrode 31 that are disposedopposite each other, with the liquid crystal layer 15 interposedtherebetween.

In order to prevent leakage of the held image signals D1 to Dn, thecapacitor elements 16 are connected in parallel with liquid crystalcapacitors formed between the pixel electrodes 27 and the commonelectrode 31. The capacitor elements 16 are provided between thepixel-electrode-side source/drain regions of the TFTs 30 and thecapacitor lines 3 b. The capacitor elements 16 have dielectric layersbetween capacitor electrodes composed of transparent conductive filmsand the pixel electrodes 27.

In the liquid crystal device 100 of, for example, a transmissive type,an optical design of a normally white mode, in which bright display isperformed when the pixels P are not driven, or a normally black mode, inwhich dark display is performed when the pixels P are not driven, isemployed. The liquid crystal device 100 in which polarizing elements arerespectively disposed on light incidence and emission sides inaccordance with the optical design is employed.

Next, the structure of each pixel P will be described in more detailwith reference to FIG. 4. As illustrated in FIG. 4, the scanning line 3a is provided on the first substrate 11. The scanning line 3 a has lightshielding properties, and may be composed of, for example, a singlemetal such as aluminum (Al), titanium (Ti), chromium (Cr), tungsten (W),tantalum (Ta), or molybdenum (Mo), or an alloy, metal silicide,polysilicide, or nitride that contains at least one of these metals. Thescanning line 3 a may be a laminate composed of any of these materials.

The scanning line 3 a is disposed below a semiconductor layer 30 a.Thus, a channel region 30 c of the TFT 30 may be substantially orcompletely shielded from light of a liquid crystal projector or the likeby forming the scanning line 3 a which is wider than the semiconductorlayer 30 a of the TFT 30. As a result, when the liquid crystal device100 is operated, light leakage current in the TFT 30 is reduced, therebyimproving a contrast ratio and making high-quality image displaypossible.

A base insulating layer 11 a composed of, for example, a silicon oxidethat constitutes a second insulating film is provided on the scanningline 3 a so as to cover the first substrate 11 and the scanning line 3a. The semiconductor layer 30 a is provided in an island shape on thebase insulating layer 11 a.

The semiconductor layer 30 a is composed of, for example, apolycrystalline silicon film, and impurity ions are implanted therein,so that the semiconductor layer 30 a has a data-line-side source/drainregion 30 s, the channel region 30 c, and a pixel-electrode-sidesource/drain region 30 d.

A first interlayer insulating layer (gate insulating layer) 11 b thatconstitutes the second insulating film is formed on the semiconductorlayer 30 a so as to cover the semiconductor layer 30 a and the baseinsulating layer 11 a. A gate electrode 30 g is provided at a positionopposite the channel region 30 c, with the first interlayer insulatinglayer 11 b interposed therebetween.

A second interlayer insulating layer 11 c that constitutes a firstinsulating film is provided on the gate electrode 30 g so as to coverthe gate electrode 30 g and the first interlayer insulating layer 11 b.Two contact holes CNT 41 and CNT 42 that extend through the firstinterlayer insulating layer 11 b and the second interlayer insulatinglayer 11 c are provided at positions where they overlap the ends of thesemiconductor layer 30 a in plan view.

Specifically, a conductive film of a light shielding conductivematerial, such as aluminum (Al), is formed so as to fill the contacthole CNT 41 and the contact hole CNT 42 and to cover the secondinterlayer insulating layer 11 c. The conductive film is subjected topatterning so as to form the contact hole CNT 41, the contact hole CNT42, and a relay layer 51 that is connected to the pixel-electrode-sidesource/drain region 30 d via the contact hole CNT 42.

The relay layer 51 shields the TFT 30 from light together with the dataline 6 a, which will be described below. The relay layer 51 partiallyand electrically connects the TFT 30 and the pixel electrode 27.

A third interlayer insulating layer 11 d that constitutes the firstinsulating film is provided on the relay layer 51 so as to cover therelay layer 51 and the second interlayer insulating layer 11 c. In thethird interlayer insulating layer 11 d, in plan view, a contact hole CNT43 is provided so as to overlap a portion of the contact hole CNT 41,and a contact hole CNT 44 is provided so as to overlap a portion of therelay layer 51.

Specifically, a conductive film of a light shielding conductivematerial, such as aluminum (Al), is formed so as to fill the contactholes CNT 43 and CNT 44 and to cover the third interlayer insulatinglayer 11 d. The conductive film is subjected to patterning so as to formthe data line 6 a, the contact holes CNT 43 and CNT 44, and a relayelectrode 47.

A fourth interlayer insulating layer 11 e is provided on the data line 6a and the relay electrode 47 so as to cover the data line 6 a, the relayelectrode 47, and the third interlayer insulating layer 11 d. The fourthinterlayer insulating layer 11 e is composed of, for example, a siliconoxide or nitride, and is subjected to a planarization process toplanarize an uneven surface caused by covering the TFT 30 and so forth.Examples of the planarization process technique include a chemicalmechanical polishing (CMP) process and a spin coating process.

A first capacitor electrode 16 a composed of an ITO film or the likethat constitutes the capacitor element 16 is formed on the fourthinterlayer insulating layer 11 e through a patterning process. Atranslucent dielectric layer 16 b that constitutes the capacitor element16 is deposited on the first capacitor electrode 16 a through apatterning process.

As the dielectric layer 16 b, a silicon compound, such as a siliconoxide film or a silicon nitride film, may be used. In addition, adielectric layer with a high dielectric constant, such as an aluminumoxide film, a titanium oxide film, a tantalum oxide film, a niobiumoxide film, a hafnium oxide film, a lanthanum oxide film, or a zirconiumoxide film, may be used.

A second capacitor electrode 16 c composed of an ITO film or the likethat constitutes the capacitor element 16 is deposited on the dielectriclayer 16 b through a patterning process. The second capacitor electrode16 c is disposed so as to overlap the first capacitor electrode 16 a,with the dielectric layer 16 b interposed therebetween. The secondcapacitor electrode 16 c constitutes the capacitor element 16 togetherwith the first capacitor electrode 16 a and the dielectric layer 16 b.

An end of the second capacitor electrode 16 c overlaps a portion of therelay electrode 47 in plan view, and is electrically connected to anextended portion of the relay electrode 47 via a contact hole CNT 65provided in the fourth interlayer insulating layer 11 e.

A fifth interlayer insulating layer 11 f is provided on the secondcapacitor electrode 16 c so as to cover the second capacitor electrode16 c and the fourth interlayer insulating layer 11 e. The fifthinterlayer insulating layer 11 f is composed of, for example, a siliconoxide or nitride, and is subjected to a planarization process toplanarize an uneven surface caused by covering wiring lines, electrodesand so forth.

The pixel electrode 27 composed of an ITO film or the like is providedon the fifth interlayer insulating layer 11 f. The pixel electrode 27 iselectrically connected to an extended portion of the relay electrode 47via a contact hole CNT 66 that is provided in the fifth interlayerinsulating layer 11 f and the fourth interlayer insulating layer 11 e.

In this way, the pixel electrode 27 and the second capacitor electrode16 c are electrically connected to the pixel-electrode-side source/drainregion 30 d of the TFT 30 via the relay electrode 47, the contact holeCNT 44, the relay layer 51 and the contact hole CNT 42.

The alignment film 28 (see FIG. 2) is provided on the surface of thepixel electrode 27. The alignment film 28 is composed of, for example,an obliquely deposited film, such as a silicon oxide film. In theembodiment, the alignment film 28 is an inorganic alignment film(vertical alignment film) composed of an obliquely deposited film of,for example, SiO_(x) (x<2), SiO₂, TiO₂, MgO, Al₂O₃, In₂O₃, Sb₂O₃, orTa₂O₅.

FIG. 5 is a schematic plan view illustrating the structure of part ofperipheral circuitry in the liquid crystal device. FIG. 6 is a schematiccross-sectional view of the peripheral circuitry taken along line VI-VIof FIG. 5. The structure of the peripheral circuitry will be describedbelow with reference to FIGS. 5 and 6.

Peripheral circuitry 101 is provided, for example, in the vicinity of aportion A of the liquid crystal device 100 illustrated in FIG. 1.Specifically, as illustrated in FIG. 5, the peripheral circuitry 101has, for example, a first VDD power supply wiring line 111 as a firstpower supply wiring line connected to the data line driving circuit 22,a second VDD power supply wiring line 112 as a second power supplywiring line connected to the scanning line driving circuit 24, a VSSpower supply wiring line 113 and signal wiring lines 114.

These wiring lines are, for example, power supply wiring lines that areconnected to the external connection terminals 61. Most of these wiringlines have larger planar areas than other wiring lines, and also havelarger amounts of electric charges than the other wiring lines.Transistors and so forth, which are not illustrated, are connected tothe first VDD power supply wiring line 111 and the second VDD powersupply wiring line 112.

As illustrated in FIG. 6, the first VDD power supply wiring line 111 andthe second VDD power supply wiring line 112 are electrically connectedto each other via a contact hole CNT 132 (first contact hole), a firstelectrical conductor 121, a contact hole CNT 131 (second contact hole),a wiring line 103 a which also serves as the scanning line 3 a, acontact hole CNT 133 (second contact hole), a second electricalconductor 122, and a contact hole CNT 134 (first contact hole). That is,the first VDD power supply wiring line 111 and the second VDD powersupply wiring line 112 are electrically connected to each other in anintegrated manner via the electrical conductors 121 and 122, the wiringline 103 a, and so forth. The contact holes CNT 131 to CNT 134 partiallyconstitute the electrical conductors.

Specifically, as described above, the wiring line 103 a is provided onthe first substrate 11. The wiring line 103 a is formed of the same filmas the scanning line 3 a, and therefore is constituted by a lightshielding film having light shielding properties like the scanning line3 a. The base insulating layer 11 a and the first interlayer insulatinglayer 11 b are provided, in sequence, on the wiring line 103 a so as tocover the wiring line 103 a and the first substrate 11.

The first electrical conductor 121 and the second electrical conductor122 are provided on the first interlayer insulating layer 11 b. Thefirst electrical conductor 121 and the second electrical conductor 122are formed of the same film as the foregoing gate electrode 30 g. Thefirst electrical conductor 121 is electrically connected to an end ofthe wiring line 103 a via the contact hole CNT 131. The secondelectrical conductor 122 is electrically connected to an end of thewiring line 103 a via the contact hole CNT 133.

The second interlayer insulating layer 11 c and the third interlayerinsulating layer 11 d are provided, in sequence, on the first electricalconductor 121 and the second electrical conductor 122 so as to cover theelectrical conductors 121 and 122 and the first interlayer insulatinglayer 11 b. The first VDD power supply wiring line 111, the second VDDpower supply wiring line 112, the VSS power supply wiring line 113, thesignal wiring lines 114, and so forth are provided on the thirdinterlayer insulating layer 11 d. These wiring lines are formed of thesame film as the foregoing data line 6 a.

The first VDD power supply wiring line 111 is electrically connected tothe first electrical conductor 121 via the contact hole CNT 132 thatextends through the second interlayer insulating layer 11 c and thethird interlayer insulating layer 11 d. The second VDD power supplywiring line 112 is electrically connected to the second electricalconductor 122 via the contact hole CNT 134 that extends through thesecond interlayer insulating layer 11 c and the third interlayerinsulating layer 11 d.

As described above, the first VDD power supply wiring line 111 and thesecond VDD power supply wiring line 112, which have particularly largeareas, are electrically connected to each other in an integrated mannervia the first electrical conductor 121, the wiring line 103 a, thesecond electrical conductor 122, and the contact holes CNT 131 to CNT134.

In this way, the first VDD power supply wiring line 111 and the secondVDD power supply wiring line 112 are connected to each other via theelectrical conductors 121 and 122, which are provided on the layer belowthe first VDD power supply wiring line 111 and the second VDD powersupply wiring line 112, and also the wiring line 103 a, which isprovided on the layer below the electrical conductors 121 and 122, sothat paths to let static electricity escape, which is accumulated in thepower supply wiring lines 111 and 112, and so forth in a manufacturingprocess, may be provided.

Specifically, when patterning (especially, shading) of the first VDDpower supply wiring line 111, the second VDD power supply wiring line112, the VSS power supply wiring line 113, the signal wiring lines 114,and so forth is performed, static electricity is generated. When thestatic electricity is concentrated in, especially, fine portions of thewiring lines, electrostatic damage of the wiring lines and thetransistors may be caused. This creates a problem, such as a decrease inthe product yield or the product reliability.

However, the power supply wiring lines 111 and 112 are electricallyconnected to each other in an integrated manner via a common wiring lineincluding the electrical conductors 121 and 122, the wiring line 103 aand so forth. Also, the power supply wiring lines 111 and 112 areconnected to each other via the redundant common wiring line. Hence, forexample, even if static electricity is generated when patterning isperformed in a manufacturing process, concentration of electric chargesmay be reduced by causing electric charges to pass through the commonwiring line before electric charges are concentrated and thereby damagewiring lines and so forth. In other words, the electric charges may bedispersed. As a result, failure, such as electrostatic damage of thewiring lines and the transistors, may be suppressed.

The electrical conductors 121 and 122 perform a relay function betweenthe power supply wiring lines 111 and 112, and also serve as addedresistors for an inrush of static electricity. The connection resistanceof the contact holes CNT 131 and CNT 133, which are close to the wiringline 103 a, is desirably higher than that of the contact holes CNT 132and CNT 134. Hence, inrushes of electric charges may be reduced further.

Because the power supply wiring lines 111 and 112 are connected to thewiring line 103 a, which is provided on the still lower layer, via theelectrical conductors 121 and 122, the distance between the power supplywiring lines 111 and 112, which are metal wiring lines, and the wiringline 103 a may be increased. Thus, such a problem that concentration ofelectric charges cannot be reduced in the case where the distancebetween the power supply wiring lines 111 and 112 and the wiring line103 a is small may be suppressed. In addition, the occurrence of damageof an insulating film or the like may be suppressed.

The electrical conductors 121 and 122 have, for example, a laminatedstructure including a tungsten silicide film and a polysilicon film.Each film is, for example, 100 nm in thickness. The wiring line 103 a iscomposed of, for example, a tungsten silicide, and is, for example, 200nm in thickness.

The first VDD power supply wiring line 111, the second VDD power supplywiring line 112, the VSS power supply wiring line 113, and so forthhave, for example, a four-layer structure including titanium (Ti), atitanium nitride (TiN), an alloy film of aluminum (Al), silicon (Si),and copper (Cu), and a titanium nitride (TiN).

Structure of Electronic Apparatus

FIG. 7 is a schematic view illustrating the structure of the projectiondisplay device as an electronic apparatus including the foregoing liquidcrystal device. The structure of the projection display device includingthe liquid crystal device will be described below with reference to FIG.7.

As illustrated in FIG. 7, a projection display device 1000 as theelectronic apparatus of the embodiment includes a polarized lightillumination device 1100 disposed along a system optical axis L, twodichroic mirrors 1104 and 1105 as light separating elements, threereflecting mirrors 1106, 1107, and 1108, five relay lenses 1201, 1202,1203, 1204, and 1205, three transmissive liquid crystal light valves1210, 1220, and 1230 as light modulators, a cross dichroic prism 1206 asa light combining element, and a projection lens 1207.

The polarized light illumination device 1100 includes a lamp unit 1101as a light source composed of a white light source, such as anultra-high pressure mercury lamp or a halogen lamp, an integrator lens1102, and a polarization conversion element 1103.

The dichroic mirror 1104 reflects a red light component (R) of apolarized light beam emitted from the polarized light illuminationdevice 1100, and transmits a green light component (G) and a blue lightcomponent (B) thereof. The other dichroic mirror 1105 reflects the greenlight component (G) transmitted through the dichroic mirror 1104, andtransmits the blue light component (B).

The red light component (R) reflected by the dichroic mirror 1104 isreflected by the reflecting mirror 1106, and then enters the liquidcrystal light valve 1210 via the relay lens 1205. The green lightcomponent (G) reflected by the dichroic mirror 1105 enters the liquidcrystal light valve 1220 via the relay lens 1204. The blue lightcomponent (B) transmitted through the dichroic mirror 1105 enters theliquid crystal light valve 1230 via a light guide system composed of thethree relay lenses 1201, 1202, and 1203, and the two reflecting mirrors1107 and 1108.

The liquid crystal light valves 1210, 1220, and 1230 are respectivelydisposed opposite incidence planes of the cross dichroic prism 1206corresponding to each of color light components. The color lightcomponents having entered the liquid crystal light valves 1210, 1220,and 1230 are modulated on the basis of video information (video signal),and are emitted toward the cross dichroic prism 1206. This prism hasfour rectangular prisms adhered together. Inside the prism, a dielectricmultilayer film that reflects a red light component and a dielectricmultilayer film that reflects a blue light component are formed in across shape. The three color light components are combined by thesedielectric multilayer films, so that light to express a color image isproduced. The combined light is projected onto a screen 1300 by theprojection lens 1207, which is a projection optical system, so as todisplay an enlarged image.

In the liquid crystal light valve 1210, the foregoing liquid crystaldevice 100 is used. The liquid crystal device 100 is disposed between apair of polarizing elements, which are disposed in a crossed Nicholstate on color light component incidence and emission sides, with gapsprovided therebetween. The same applies in the other liquid crystallight valves 1220 and 1230.

According to the projection display device 1000, the use of a liquidcrystal module including the liquid crystal device 100 may provide anelectronic apparatus that allows improvement in the reliability of thequality thereof to be achieved.

As described above in detail, according to the liquid crystal device 100and the electronic apparatus of the embodiment, the following effectsare obtained.

(1) According to the liquid crystal device 100 of the embodiment, thefirst VDD power supply wiring line 111 and the second VDD power supplywiring line 112 are electrically connected to each other in anintegrated manner via the first electrical conductor 121, the secondelectrical conductor 122, the wiring line 103 a, and the contact holesCNT 131 to CNT 134, which are provided on/in the layers below the firstVDD power supply wiring line 111 and the second VDD power supply wiringline 112, and which constitute a common wiring line. Thus, even ifstatic electricity is generated when patterning of transistors, wiringlines, and so forth which are connected to the power supply wiring lines111 and 112 is performed, electric charges may pass through the commonwiring line, through which the power supply wiring lines 111 and 112 areredundantly routed, so that the static electricity may be prevented frombeing concentrated in a portion. Hence, the amount of static electricityis reduced, so that electrostatic damage of the transistors and thewiring lines, which are connected to the power supply wiring lines 111and 112 to which power is supplied, may be suppressed. In addition, theelectrical conductors 121 and 122 may be used as inrush resistors andthereby may consume electric charges.

(2) According to the electronic apparatus of the embodiment, because theelectronic apparatus includes the foregoing liquid crystal device 100,the transistors and the wiring lines, which are connected to the powersupply wiring lines 111 and 112 provided in the peripheral circuitry101, may be protected from static electricity, so that the electronicapparatus that allows improvement in the reliability and the yieldthereof to be achieved may be provided.

Aspects of the invention are not limited to the above embodiment, andcan be appropriately modified without departing from the gist or spiritof the aspect of the invention known through the claims and the wholespecification. Such modifications are included in the technical scope ofthe aspect of the invention. In addition, the following modificationsmay be implemented.

First Modification

The structure of the electro-optical device is not limited to that ofthe foregoing liquid crystal device 100. As long as an electro-opticaldevice includes power supply wiring lines, a first electrical conductor,a second electrical conductor, and a wiring line, and as long as thefirst electrical conductor, the second electrical conductor, and thewiring line are provided on layers below the power supply wiring lines,such a structure may be applied to an electro-optical device havinganother structure.

Second Modification

As described above, the first VDD power supply wiring line 111 and thesecond VDD power supply wiring line 112 are electrically connected toeach other in an integrated manner (maintained at the same potential) bythe common wiring line (contact hole, electrical conductor, and wiringline). Aspects of the invention are not limited to this. Other powersupply wiring lines may be electrically connected to each other in anintegrated manner. For example, a VSS power supply wiring line connectedto the data line driving circuit 22 and a VSS power supply wiring lineconnected to the scanning line driving circuit 24 may be electricallyconnected to each other in an integrated manner using the common wiringline.

Third Modification

The foregoing electro-optical device is not limited to the liquidcrystal device 100. Examples of the electro-optical device may includedisplay devices, such as an organic electroluminescence (EL) device andan electrophoresis apparatus. Also, examples of the electro-opticaldevice may include a reflective liquid crystal device (LCOS), a plasmadisplay (PDP), a field emission display (FED, SED or the like), and adigital micromirror device (DMD).

Fourth Modification

In the above-described embodiment, the projection display device 1000(projector) is taken as an example of the electronic apparatus. However,the electronic apparatus is not limited to this. Examples of theelectronic apparatus may include a viewer, a view finder, a head mounteddisplay, and the like. Also, examples of the electronic apparatus mayinclude various types of electronic apparatuses, such as a liquidcrystal television, a mobile phone, an electronic organizer, a wordprocessor, a view finder-type or monitor direct-view-type video taperecorder, a workstation, a mobile personal computer, a video phone, aPOS terminal, a pager, an electronic calculator, and a touch panel, anelectrophoresis apparatus, such as an electronic paper, a car navigationdevice, and the like.

The entire disclosure of Japanese Patent Application No. 2011-212184,filed Sep. 28, 2011 is expressly incorporated by reference herein.

What is claimed is:
 1. An electro-optical device comprising: a data linedriving circuit; a scanning line driving circuit; a first power supplywiring that supplies power to the data line driving circuit; a secondpower supply wiring that supplies power to the scanning line drivingcircuit; a wiring that electrically connects the first power supplywiring and the second power supply wiring line; a first electricalconductor that electrically connects the first power supply wiring andthe wiring; and a second electrical conductor that electrically connectsthe second power supply wiring and the wiring.
 2. The electro-opticaldevice according to claim 1, further comprising: a first insulating filmthat is provided between a first layer and the second layer, the firstlayer being a layer of the first power supply wiring and the secondpower supply wiring, the second layer being a layer of the firstelectrical conductor and the second electrical conductor; and a secondinsulating film that is provided between the second layer and a layer ofthe wiring, the first electrical conductor and the second electricalconductor being provided between the first layer and the layer of thewiring.
 3. The electro-optical device according to claim 1, the firstpower supply wiring and the first electrical conductor being connectedvia a first contact hole that opens the first insulating film, thesecond power supply wiring and the second electrical conductor beingconnected via a second contact hole that opens the first insulatingfilm, and the first electrical conductor and the second electricalconductor being connected to the wiring via a third contact hole and afourth contact hole that open the second insulating film.
 4. Theelectro-optical device according to claim 3, connection resistance ofthe third contact hole being higher than connection resistance of thefirst contact hole.
 5. The electro-optical device according to claim 1,a layer of a gate electrode being the second layer.
 6. Theelectro-optical device according to claim 1, further comprising: aplurality of transistors, one of the plurality of transistors beingprovided so as to correspond to one of a plurality of pixel portions;and a light shielding film that shields the one of the pluralitytransistors from light, a layer of the wiring being a layer of the lightshielding film.
 7. The electro-optical device according to claim 1, afirst layer of the first power supply wiring and the second power supplywiring being a layer of a data line.
 8. An electronic apparatuscomprising the electro-optical device according to claim
 1. 9. Anelectronic apparatus comprising the electro-optical device according toclaim
 2. 10. An electronic apparatus comprising the electro-opticaldevice according to claim
 3. 11. An electronic apparatus comprising theelectro-optical device according to claim
 4. 12. An electronic apparatuscomprising the electro-optical device according to claim
 5. 13. Anelectronic apparatus comprising the electro-optical device according toclaim
 6. 14. An electronic apparatus comprising the electro-opticaldevice according to claim 7.